FFB2222A_1 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN Multi-Chip General Purpose Amplifier

FFB2222A
FMB2222A
E2
B2
C1
C2
E1
C1
SC70-6
Mark: .1P
C2
B1
pin #1 E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
B2
E2
pin #1 B1
SuperSOT-6
Mark: .1P
Dot denotes pin #1
MMPQ2222A
B4
E4
B3
E3
B2
E2
B1
E1
C4
C4
C3
C3
SOIC-16
Mark:
C2
C2
C1
pin #1 ^C1
MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
75
V
5.0
V
4
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
FFB2222A
PD
Total Device Dissipation
300
Derate above 25°C
2.4
RθJA
Thermal Resistance, Junction to Ambient
415
Effective 4 Die
Each Die
Max
FMB2222A
700
5.6
180
MMPQ2222A
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
 1998 Fairchild Semiconductor Corporation