FFAF10U170S Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – DAMPER DIODE

FFAF10U170S
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• Suitable for damper diode in horizontal
deflection circuits
12
TO-3PF
1. Cathode 2. Anode
DAMPER DIODE
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ T_C = 125°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
T_J, T_STG
Operating Junction and Storage Temperature
Value
1700
10
100
- 65 to +150
Thermal Characteristics
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
1.5
Electrical Characteristics T_C=25 °C unless otherwise noted
Symbol
Parameter
V_{FM *}
I_{RM *}
Maximum Instantaneous Forward Voltage
I_F = 10A
I_F = 10A
Maximum Instantaneous Reverse Current
@ rated V_R
t_rr
Maximum Reverse Recovery Time
(I_F =1A, di/dt = 50A/µs)
t_fr
Maximum Forward Recovery Time
(I_F =6.5A, di/dt = 50A/µs)
V_FRM
Maximum Forward Recovery Voltage
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
Min.
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
2.2
2.0
0.1
10
140
400
13
Units
V
A
A
°C
Units
°C/W
Units
V
mA
ns
ns
V
©2001 Fairchild Semiconductor Corporation
Rev. A, June 2001