FFA60UP20DNTU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – 60 A, 200 V, Ultrafast Dual Diode

September 2004
tm
FFA60UP20DN
Features
• Ultrafast Recovery, Trr = 32 ns (@ IF = 30 A)
• Max. Forward Voltage, VF = 1.15 V (@ TC = 25°C)
• Reverse Voltage: V_RRM = 200 V
• Avalanche Energy Rated
• RoHS Compliant
60 A, 200 V, Ultrafast Dual Diode
The FFA60UP20DN is an ultrafast diode with low forward
voltage drop and rugged UIS capability. This device is intended
for use as freewheeling and clamping diodes in a variety of
switching power supplies and other power switching applications.
It is specially suited for use in switching power supplies and
industrial applicationa as welder and UPS application.
Applications
• Power Switching Circuits
• Output Rectifiers
• Freewheeling Diodes
• Switching Mode Power Supply
1 23
TO-3PN
1. Anode 2.Cathode 3. Anode
Absolute Maximum Ratings (per diode) T_C=25°C unless otherwise noted
Symbol
V_RRM
I_F(AV)
I_FSM
T_J, T_STG
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ T_C = 100°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
Unit
200
V
30
A
300
A
- 65 to +150
°C
Thermal Characteristics
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
1.4
Unit
°C/W
Electrical Characteristics (per diode) T_C=25 °C unless otherwise noted
Symbol
Parameter
Min. Typ. Max.
Unit
V_{F *}
Maximum Instantaneous Forward Voltage
V
I_F = 30 A
I_F = 30 A
T_C = 25 °C
-
T_C = 100 °C
-
-
1.15
-
1.0
I_{R *}
Maximum Instantaneous Reverse Current
µA
@ rated V_R
T_C = 25 °C
-
-
10
T_C = 100 °C
-
-
100
t_rr
Reverse Recovery Time
I_rr
Reverse Recovery Current
Q_rr
Reverse Recovery Charge
(I_F = 30 A, di/dt = 200 A/µs)
-
32
-
ns
-
2.4
-
A
-
38.4
-
nC
t_rr
Maximum Reverse Recovery Time
(I_F =1 A, di/dt = 100 A/µs)
-
-
40
ns
W_AVL
Avalanche Energy (L = 40 mH)
2
-
-
mJ
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
©2004 Fairchild Semiconductor Corporation
Rev. A, August 2004