FDZ7296 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench BGA MOSFET

November 2004
FDZ7296
30V N-Channel PowerTrench^® BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ7296
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• High-side Mosfet in DC-DC converters for Server
and Notebook applications
Features
11 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
• Occupies only 0.10 cm² of PCB area:
1/3 the area of SO-8.
• Ultra-thin package: less than 0.80 mm height
when mounted to PCB.
• High performance trench technology for extremely
low RDS(ON)
• Optimized for low Qg and Qgd to enable fast
switching and reduce CdV/dt gate coupling
D DD
S SS
S SS
Pin 1
Pin 1
S SS
GSS
DD D
Top
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJB
Thermal Resistance, Junction-to-Ball
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
7296
FDZ7296
7’’
D
G
S
Ratings
30
±20
11
20
2.1
–55 to +150
60
6.3
0.6
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ7296 Rev B (W)