FDZ7064N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel Logic Level PowerTrench BGA MOSFET

May 2004
FDZ7064N
30V N-Channel Logic Level PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ7064N
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications resulting in DC/DC power supply
designs with higher overall efficiency.
Applications
• 13.5 A, 30 V. RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
RDS(ON) = 7.0 mΩ @ VGS = 10 V
• Occupies only 14 mm² of PCB area. Only 42% of
the area of SO-8
• Ultra-thin package: less than 0.8 mm height when
mounted to PCB
• 3.5 x 4 mm² Footprint
• High power and current handling capability.
• DC/DC converters
• Solenoid drive
Pin 1
D DDD DD
D SSS SD
D SSS SD
D SSS SD
DGSS SD
Bottom
Pin 1
Top
D
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJB
Thermal Resistance, Junction-to-Ball
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
7064N
FDZ7064N
13”
Ratings
30
±12
13.5
60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
©2004 Fairchild Semiconductor Corporation
FDZ7064N Rev.D4 (W)