FDZ7064AS Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET BGA MOSFET

December 2004
FDZ7064AS
30V N-Channel PowerTrench^® SyncFET™ BGA MOSFET
Features
■ 13.5 A, 30 V. R_DS(ON) = 5.6 mΩ @ V_GS = 10 V
R_DS(ON) = 7.1 mΩ @ V_GS = 4.5 V
■ Occupies only 14 mm² of PCB area. Only 42% of the area of
SO-8
■ Ultra-thin package: less than 0.76 mm height when mounted
to PCB
■ 3.5 x 4 mm² Footprint
■ High power and current handling capability.
Applications
■ DC/DC converters
General Description
This MOSFET is designed to replace a single MOSFET and
parallel Schottky diode in synchronous DC:DC power supplies.
Combining Fairchild’s 30V PowerTrench SyncFET process with
state of the art BGA packaging, the FDZ7064AS minimizes both
PCB space and R_DS(ON). This BGA SyncFET embodies a
breakthrough in both packaging and power MOSFET integration
which enables the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-low profile
packaging, low gate charge, ultra-low reverse recovery charge
and low R_DS(ON).
D
D
D
D
D
D
Pin 1
D
S
S
S
S
D
D
S
S
S
S
D
G
D
S
S
S
S
D
Pin 1
D
G
S
S
S
D
Bottom
Top
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R_θJB
R_θJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ball (Note 1)
Thermal Resistance, Junction-to-Case (Note 1)
Package Marking and Ordering Information
Device Marking
7064AS
Device
FDZ7064AS
Reel Size
13”
Ratings
30
±20
13.5
60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
D
S
Units
V
V
A
W
°C
°C/W
Quantity
3000
©2004 Fairchild Semiconductor Corporation
1
FDZ7064AS Rev. A
www.fairchildsemi.com