FDZ5047N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel Logic Level PowerTrench BGA MOSFET

January 2004
FDZ5047N
30V N-Channel Logic Level PowerTrench^ BGA MOSFET
General Description
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ5047N
minimizes both PCB space and R_DS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R_DS(ON).
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R_DS(ON) specifications resulting in DC/DC power supply
designs with higher overall efficiency.
Applications
• DC/DC converters
• Solenoid drive
Features
• 22 A, 30 V.
R_DS(ON) = 2.9 mΩ @ V_GS = 10 V
R_DS(ON) = 4.5 mΩ @ V_GS = 4.5 V
• Occupies only 27.5 mm² of PCB area:
1/5 of the area of a TO-220 package
• Ultra-thin package: less than 0.90 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics
• Ultra-low gate charge x R_DS(ON) product
Pin 1
DDDDDD
DSSSSD
DSSSSD
DSSSSD
DSSSSD
D^GS S SD
Bottom
Pin 1
Top
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Total Power Dissipation @ T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJB
Thermal Resistance, Junction-to-Ball
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
5047N
FDZ5047N
13’’
2004 Fairchild Semiconductor Corporation.
D
G
S
Ratings
30
±20
22
75
2.8
–50 to +150
44
2.7
0.3
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
3000 units
FDZ5047N Rev D4 (W)