FDZ493P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm

November 2006
FDZ493P
P-Channel 2.5V Specified PowerTrench^® BGA MOSFET
tm
–20V, –4.6A, 46mΩ
Features
„ Max r_DS(on) = 46mΩ at V_GS = –4.5V, I_D = –4.6A
„ Max r_DS(on) = 72mΩ at V_GS = –2.5V, I_D = –3.6A
„ Occupies only 2.25 mm² of PCB area. Less than 50% of the
area of SSOT-6.
„ Ultra-thin package: less than 0.80 mm height when mounted
to PCB.
„ Outstanding thermal transfer characteristics:4 times better
than SSOT-6.
„ Ultra-low Qg x r_DS(on) figure-of-merit.
„ RoHS Compliant.
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench^®
process with state of the art BGA packaging process, the
FDZ493P minimizes both PCB space and r_DS(on). This BGA
MOSFET embodies a breakthrough in packaging technology
which enables the device to combine excellent thermal transfer
characteristics, high current handing capability,ultra-low profile
packaging, low gate charge, and low r_DS(on).
Application
„ Battery management
„ Load switch
„ Battery protection
GATE
S
G
D
BOTTOM
TOP
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
E
Device
FDZ493P
Reel Size
7’’
(Note 1a)
(Note 1a)
Ratings
–20
±12
–4.6
–10
1.7
–55 to +150
Units
V
V
A
W
°C
(Note 1a)
72
°C/W
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDZ493P Rev.B(W)
www.fairchildsemi.com