FDZ3N513ZT Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated NMOS and Schottky Diode

FDZ3N513ZT
July 2010
Integrated NMOS and Schottky Diode
Features
General Description
„ Monolithic NMOS and Schottky Diode
„ Ultra-small form factor 1mm x 1mm WLCSP
„ Max r_DS(on) = 462 mΩ at V_GS = 4.5 V, I_D = 0.3 A
„ Max r_DS(on) = 520 mΩ at V_GS = 3.2 V, I_D = 0.3 A
„ HBM ESD protection level > 2000V (Note3)
„ RoHS Compliant
The FDZ3N513ZT is a monolithic NMOS/ Schottky combination
(FETky) and is designed and wired to function as a discontinu-
ous conduction mode (DCM) boost LED power train for mobile
LED backlighting applications.
Application
„ Boost Converter Power Train for single cell Li-ion LED
backlighting
D
S
K
G
Pin 1
WL-CSP 3D Bumps Facing Up View
WL-CSP 3D Bumps Facing Down View
WL-CSP 1.0X1.0 Bumps Facing Up View
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
P_D
I_D
V_RRM
I_O
T_J, T_STG
ESD
NMOS Drain to Source Voltage
NMOS Gate to Source Voltage
Power Dissipation @ T_A = 25°C
Maximum Continuous NMOS Drain Current
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating Junction and Storage Temperature
Electrostatic Discharge Protection
Thermal Characteristics
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient - 1in², 2oz. Copper
Thermal Resistance, Junction to Ambient - Minimum Pad
(Note 1a)
(Note 1a)
CDM
(Note 1a)
(Note 1b)
Ratings
30
-0.3/5.5
1
1.1
25
0.3
-55/125
2000
100
260
Units
V
V
W
A
V
A
°C
V
°C/W
°C/W
Package Marking and Ordering Information
Part Number
FDZ3N513ZT
Device Marking
Z3
Package
WL-CSP 1.0X1.0
Reel Size
7”
Tape Width
8mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
1
FDZ3N513ZT Rev. C
www.fairchildsemi.com