FDZ391P Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel 1.5 V PowerTrench® Thin WL-CSP MOSFET

September 2008
FDZ391P
P-Channel 1.5 V PowerTrench^® Thin WL-CSP MOSFET ^tm
-20 V, -3 A, 85 mΩ
Features
General Description
„ Max r_DS(on) = 85 mΩ at V_GS = -4.5 V, I_D = -1 A
„ Max r_DS(on) = 123 mΩ at V_GS = -2.5 V, I_D = -1 A
„ Max r_DS(on) = 200 mΩ at V_GS = -1.5 V, I_D = -1 A
„ Occupies only 1.5 mm² of PCB area
„ Ultra-thin package: less than 0.4 mm height when mounted
to PCB
„ RoHS Compliant
Designed on Fairchild's advanced 1.5 V PowerTrench process
with state of the art "low pitch" Thin WLCSP packaging process,
the FDZ391P minimizes both PCB space and r_DS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r_DS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
Pin 1
S
S
G
D
S
D
S
G
BOTTOM
TOP
D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-3
-15
1.9
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
65
(Note 1b)
133
°C/W
Device Marking
6
Device
FDZ391P
Package
WL-CSP Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2008 Fairchild Semiconductor Corporation
1
FDZ391P Rev.B
www.fairchildsemi.com