FDZ375P_10 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.7 A, 78 mΩ

April 2010
FDZ375P
P-Channel 1.5 V Specified PowerTrench^® Thin WL-CSP MOSFET
-20 V, -3.7 A, 78 mΩ
Features
General Description
„ Max r_DS(on) = 78 mΩ at V_GS = -4.5 V, I_D = -2.0 A
„ Max r_DS(on) = 92 mΩ at V_GS = -2.5 V, I_D = -1.5 A
„ Max r_DS(on) = 112 mΩ at V_GS = -1.8 V, I_D = -1.0 A
„ Max r_DS(on) = 150 mΩ at V_GS = -1.5 V, I_D = -1.0 A
„ Occupies only 1.0 mm² of PCB area. Less than 30% of the
area of 2 x 2 BGA
Designed on Fairchild's advanced 1.5 V PowerTrench^® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ375P minimizes both PCB space and r_DS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r_DS(on).
„ Ultra-thin package: less than 0.4 mm height when mounted to
PCB
„ RoHS Compliant
Applications
„ Battery management
„ Load switch
„ Battery protection
S
D
S
G
Pin 1
S
G
Pin 1
BOTTOM
TOP
D
WL-CSP 1.0X1.0 Thin
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
T_A = 25°C
Power Dissipation
T_A = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-3.7
-12
1.7
0.5
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
75
(Note 1b)
260
°C/W
Device Marking
N
Device
FDZ375P
Package
WL-CSP 1.0X1.0 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
1
FDZ375P Rev.C
www.fairchildsemi.com