FDZ372NZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET

March 2010
FDZ372NZ
N-Channel 1.5 V Specified PowerTrench^® Thin WL-CSP MOSFET
20 V, 4.7 A, 50 mΩ
Features
General Description
„ Max r_DS(on) = 50 mΩ at V_GS = 4.5 V, I_D = 2 A
„ Max r_DS(on) = 60 mΩ at V_GS = 2.5 V, I_D = 2 A
„ Max r_DS(on) = 72 mΩ at V_GS = 1.8 V, I_D = 1 A
„ Max r_DS(on) = 93 mΩ at V_GS = 1.5 V, I_D = 1 A
„ Occupies only 1.0 mm² of PCB area. Less than 30% of the
area of 2x2 BGA
„ Ultra-thin package: less than 0.4 mm height when mounted
to PCB
„ HBM ESD protection level > 3200V (Note3)
„ RoHS Compliant
Designed on Fairchild's advanced 1.5 V PowerTrench^® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ372NZ minimizes both PCB space and r_DS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r_DS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
Pin 1
S
D
S
G
Pin 1
BOTTOM
WL-CSP 1.0X1.0 Thin
TOP
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
4.7
12
1.7
0.5
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
L
Device
FDZ372NZ
Package
WL-CSP 1.0x1.0 Thin
(Note 1a)
75
(Note 1b)
260
Reel Size
7 ’’
Tape Width
8 mm
°C/W
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
1
FDZ372NZ Rev.C2
www.fairchildsemi.com