FDZ293P_06 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5 V Specified PowerTrench® BGA MOSFET

Feb 2006
FDZ293P
P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ293P minimizes both PCB space
and rDS(on). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low rDS(on).
Applications
• Battery management
• Load switch
• Battery protection
G AT E
Features
• –4.6 A, –20 V
rDS(on) = 46 mΩ @ VGS = –4.5 V
rDS(on) = 72 mΩ @ VGS = –2.5 V
• Occupies only 2.25 mm² of PCB area.
Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.85 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Qg x rDS(on) figure-of-merit
• High power and current handling capability.
S
G
Bottom
Top
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
B
FDZ293P
13”
©2005 Fairchild Semiconductor Corporation
D
Ratings
–20
±12
–4.6
–10
1.7
–55 to +150
72
2
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
10000 units
FDZ293P Rev. D (W)