FDZ293P Datasheet, PDF(1/7 Page) Fairchild Semiconductor – P-Channel 2.5 V Specified PowerTrench BGA MOSFET

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FDZ293P Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel 2.5 V Specified PowerTrench BGA MOSFET

December 2004

FDZ293P

P-Channel 2.5 V Speciï¬ed PowerTrenchÂ® BGA MOSFET

Features

I â4.6 A, â20 V RDS(ON) = 46 mâ¦ @ VGS = â4.5 V

RDS(ON) = 72 mâ¦ @ VGS = â2.5 V

I Occupies only 2.25 mm2 of PCB area.

Less than 50% of the area of a SSOT-6

I Ultra-thin package: less than 0.85 mm height when mounted

to PCB

I Outstanding thermal transfer characteristics:

4 times better than SSOT-6

I Ultra-low Qg x RDS(ON) ï¬gure-of-merit

I High power and current handling capability.

Applications

I Battery management

I Load switch

I Battery protection

General Description

Combining Fairchildâs advanced 2.5V speciï¬ed PowerTrench

process with state of the art BGA packaging, the FDZ293P min-

imizes both PCB space and RDS(ON). This BGA MOSFET

embodies a breakthrough in packaging technology which

enables the device to combine excellent thermal transfer char-

acteristics, high current handling capability, ultra-low proï¬le

packaging, low gate charge, and low RDS(ON).

GATE

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FDZ293P Rev. C

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