FDZ291P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 1.5 V Specified PowerTrench BGA MOSFET

October 2005
FDZ291P
P-Channel 1.5 V Specified PowerTrench^® BGA MOSFET
General Description
Combining Fairchild’s advanced 1.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ291P minimizes both PCB space
and R_DS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R_DS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• –4.6 A, –20 V
R_DS(ON) = 40 mΩ @ V_GS = –4.5 V
R_DS(ON) = 60 mΩ @ V_GS = –2.5 V
R_DS(ON) = 160 mΩ @ V_GS = –1.5 V
• Occupies only 2.25 mm² of PCB area.
Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.85 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Q_g x R_DS(ON) figure-of-merit
• High power and current handling capability.
GATE
S
G
Bottom
Top
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
P_D
T_J, T_STG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
D
FDZ291P
7”
D
Ratings
–20
±8
–4.6
–10
1.7
–55 to +150
72
2
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDZ291P Rev. C1 (W)