FDZ2554P_07 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET

June 2007
FDZ2554P
Monolithic Common Drain P-Channel 2.5V Specified Power Trench^® BGA MOSFET
-20V, -6.5A, 28mΩ
Features
General Description
„ Max r_DS(on) = 28mΩ at V_GS = -4.5V, I_D = -6.5A
„ Max r_DS(on) = 45mΩ at V_GS = -2.5V, I_D = -5A
„ Occupies only 0.10 cm² of PCB area: 1/3 the area of SO-8
„ Ultra-thin package: less than 0.80 mm height when mounted
to PCB
„ Outstanding thermal transfer characteristics: significantly bet-
ter than SO-8
„ Ultra-low Qg x r_DS(on) figure-of-merit
„ High power and current handling capability
„ RoHS Compliant
Combining Fairchild’s advanced 2.5V specified PowerTrench
process with state-of-the-art BGA packaging, the FDZ2554P
minimizes both PCB space and r_DS(on). This monolithic common
drain BGA MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, high current handling capability,
ultra-low profile packaging, low gate charge, and low r_DS(on).
Applications
„ Battery management
„ Load Switch
„ Battery protection
Bottom
S
G
Q1
D
Q2
G
Top
S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-20
±12
-6.5
-20
2.1
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
R_θJA
R_θJB
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ball
Package Marking and Ordering Information
(Note 1)
0.6
(Note 1a)
60
(Note 1b)
108
(Note 1)
6.3
°C/W
Device Marking
2554P
Device
FDZ2554P
Package
BGA 2.5X4.0
Reel Size
7’’
Tape Width
12 mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDZ2554P Rev B
www.fairchildsemi.com