FDZ206P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench

February 2006
FDZ206P
P-Channel 2.5V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ206P minimizes both PCB space
and rDS(on). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low rDS(on).
Applications
• Battery management
• Load switch
• Battery protection
Gate
Features
• –13 A, –20 V. rDS(on) = 9.5 mΩ @ VGS = –4.5 V
rDS(on) = 14.5 mΩ @ VGS = –2.5 V
• Occupies only 14 mm² of PCB area.
Only 42% of the area of SO-8
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• 0.65 mm ball pitch
• 3.5 x 4 mm² footprint
• High power and current handling capability
S
G
Bottom
Index
slot
Top
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJB
Thermal Resistance, Junction-to-Ball
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
206P
FDZ206P
13”
Ratings
–20
±12
–13
–60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
D
Units
V
V
A
W
°C
°C/W
Quantity
4000
©2006 Fairchild Semiconductor Corporation
FDZ206P Rev. E (W)