FDZ204P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench

March 2003
FDZ204P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ204P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
D
D
D
S
S
S
G
S
S
Pin 1
Features
• –4.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V
RDS(ON) = 75 mΩ @ VGS = –2.5 V
• Occupies only 4 mm² of PCB area.
Less than 40% of the area of a SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Ultra-low Qg x RDS(ON) figure-of-merit.
• High power and current handling capability.
S
G
Bottom
Top
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJB
Thermal Resistance, Junction-to-Ball
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
204P
FDZ204P
7’’
D
Ratings
–20
±12
–4.5
–20
1.8
–55 to +150
67
11
1
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDZ204P Rev. D2 (W)