FDZ202P Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET

November 1999
ADVANCE INFORMATION
FDZ202P
P-Channel 2.5V Specified PowerTrench^TM BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ202P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
•= Battery management
•= Load switch
•= Battery protection
Features
= •= –5.5 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V
RDS(ON) = 0.075 Ω @ VGS = –2.5 V.
•= Occupies only 5 mm² of PCB area.
Only 55% of the area of SSOT-6
•= Ultra-thin package: less than 0.70 mm height when
mounted to PCB
•= Outstanding thermal transfer characteristics:
4 times better than SSOT-6
•= Ultra-low Qg x RDS(ON) figure-of-merit.
•= High power and current handling capability.
Pin 1
DDD
SSS
GSS
DDD
Bottom
Pin 1
Top
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
F202
FDZ202P
TBD
S
G
D
Ratings
–20
±12
–5.5
–20
2.7
-55 to +175
55
8
Tape width
TBD
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
TBD
1999 Fairchild Semiconductor Corporation
FDZ202P Rev. A (W)