FDZ201N_04 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel 2.5V Specified PowerTrench BGA MOSFET

January 2004
FDZ201N
N-Channel 2.5V Specified PowerTrench^ BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state-of-the-art BGA
packaging, the FDZ201N minimizes both PCB space
and R_DS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R_DS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• 9 A, 20 V.
R_DS(ON) = 18 mΩ @ V_GS = 4.5 V
R_DS(ON) = 30 mΩ @ V_GS = 2.5 V
• Occupies only 5 mm² of PCB area: only 55% of the
area of SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Q_g x R_DS(ON) figure-of-merit
• High power and current handling capability
Pin 1
DDD
SSS
GSS
DDD
Bottom
Pin 1
Top
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJB
Thermal Resistance, Junction-to-Ball
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
201N
FDZ201N
7’’
D
G
S
Ratings
20
±12
9
20
2
–55 to +150
64
8
0.7
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDZ201N Rev F2 (W)