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FDZ197PZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mΩ
June 2009
FDZ197PZ
P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
-20 V, -3.8 A, 64 mΩ
Features
„ Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A
„ Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A
„ Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A
„ Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A
„ Occupies only 1.5 mm2 of PCB area.Less than 50% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.65 mm height when mounted
to PCB
„ HBM ESD protection level > 4400V (Note3)
„ RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" WLCSP packaging process, the
FDZ197PZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
PIN1
S
S
G
D
S
D
TOP
BOTTOM
WL-CSP 1x1.5 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-3.8
-15
1.9
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
65
(Note 1b)
133
°C/W
Device Marking
7
Device
FDZ197PZ
Package
WL-CSP 1x1.5 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2009 Fairchild Semiconductor Corporation
1
FDZ197PZ Rev.C1
www.fairchildsemi.com
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