FDZ192NZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mΩ

January 2010
FDZ192NZ
N-Channel 1.5 V Specified PowerTrench^® Thin WL-CSP MOSFET
20 V, 5.3 A, 39 mΩ
Features
„ Max r_DS(on) = 39 mΩ at V_GS = 4.5 V, I_D = 2.0 A
„ Max r_DS(on) = 43 mΩ at V_GS = 2.5 V, I_D = 2.0 A
„ Max r_DS(on) = 49 mΩ at V_GS = 1.8 V, I_D = 1.0 A
„ Max r_DS(on) = 55 mΩ at V_GS = 1.5 V, I_D = 1.0 A
„ Occupies only 1.5 mm² of PCB area.Less than 50% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.65 mm height when mounted
to PCB
„ HBM ESD protection level > 2200V (Note3)
„ RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench^® process
with state of the art "fine pitch" WLCSP packaging process, the
FDZ192NZ minimizes both PCB space and r_DS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r_DS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
PIN1
S
S
G
D
S
D
BOTTOM
TOP
WL-CSP 1x1.5 Thin
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
T_A = 25°C
Power Dissipation
T_A = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
5.3
15
1.9
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
65
(Note 1b)
133
°C/W
Device Marking
8
Device
FDZ192NZ
Package
WL-CSP 1x1.5 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
1
FDZ192NZ Rev.C1
www.fairchildsemi.com