FDY6342L Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Integrated Load Switch

FDY6342L
Integrated Load Switch
September 2008
tm
Features
„ Max r_DS(on) = 0.5 Ω at V_GS = 4.5 V, I_D = –0.83 A
„ Max r_DS(on) = 0.7 Ω at V_GS = 2.5 V, I_D = –0.70 A
„ Max r_DS(on) = 1.2 Ω at V_GS = 1.8 V, I_D = –0.43 A
„ Max r_DS(on) = 2.8 Ω at V_GS = 1.5 V, I_D = –0.36 A
„ Control MOSFET (Q1) includes Zener protection for ESD
ruggedness (>4 kV Human body model)
„ High performance trench technology for extremely low r_DS(on)
„ Compact industry standard SC89-6 surface mount package
„ RoHS Compliant
General Description
This device is particularly suited for compact power
management in portable electronic equipment where 2.5 V to
8 V input and 0.83 A output current capability are needed. This
load switch integrates a small N-Channel power MOSFET (Q1)
that drives a large P-Channel power MOSFET (Q2) in one tiny
SC89-6 package.
Applications
„ Power management
„ Load switch
6
5
4
1
2
3
SC89-6
Q2
Vin,R1 ⁴
　
ON/OFF 5
3 Vout,C1
2 NC
Equivalent Circuit
IN
V_DROP
OUT
Q1
R1,C1 ⁶
1 R2
ON/OFF
See Application Circuit
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_IN
V_ON/OFF
I_Load
P_D
T_J, T_STG
Parameter
Gate to Source Voltage (Q2)
Gate to Source Voltage (Q1)
Load Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 2)
(Note 2)
(Note 1a)
(Note 1b)
Ratings
±8
–0.5 to 8
–0.83
–1.0
0.625
0.446
–55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
200
(Note 1b)
280
°C/W
Device Marking
H
Device
FDY6342L
Package
SC89-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDY6342L Rev.B
www.fairchildsemi.com