FDY4001CZ Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Complementary N & P-Channel PowerTrench MOSFET

August 2006
FDY4001CZ
tm
Complementary N & P-Channel PowerTrench^®
MOSFET
Features
Q1: N-Channel
„ Max r_DS(on) = 5Ω at V_GS = 4.5V, I_D = 200mA
„ Max r_DS(on) = 7Ω at V_GS = 2.5V, I_D = 175mA
„ Max r_DS(on) = 9Ω at V_GS = 1.8V, I_D = 150mA
Q2: P-Channel
„ Max r_DS(on) = 8Ω at V_GS = -4.5V, I_D = -150mA
„ Max r_DS(on) = 12Ω at V_GS = -2.5V, I_D = -125mA
„ Max r_DS(on) = 15Ω at V_GS = -1.8V, I_D = -100mA
„ ESD protection diode (note 3)
„ RoHS Compliant
General Description
This Complementary N & P-Channel MOSFET has been
designed using Fairchild Semiconductor’s advanced Power
Trench^® process to optimize the r_DS(ON) @ V_GS=2.5V and
specify the r_DS(ON) @ V_GS = 1.8V.
Applications
„ Level shifting
„ Power Supply Converter Circuits
„ Load/Power Switching Cell Phones, Pagers
6
5
4
1
2
3
S2 4
G2 5
D1 6
3 D2
2 G1
1 S1
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation (Steady State)
T_J, T_STG Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
R_θJA
Thermal Resistance, Junction to Ambient
R_θJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
Device Marking
F
Device
FDY4001CZ
Package
SC89-6
Reel Size
7”
Q1
Q2
20
-20
±12
±8
200
-150
1000
-1000
625
446
-55 to 150
Units
V
V
mA
mW
°C
200
°C/W
280
Tape Width
8mm
Quantity
3000units
©2006 Fairchild Semiconductor Corporation
1
FDY4001CZ Rev. B
www.fairchildsemi.com