FDY4000CZ Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Complementary N & P-Channel PowerTrench MOSFET

August 2006
FDY4000CZ
tm
Complementary N & P-Channel PowerTrench^®
MOSFET
Features
Q1: N-Channel
„ Max r_DS(on) = 0.7Ω at V_GS = 4.5V, I_D = 600mA
„ Max r_DS(on) = 0.85Ω at V_GS = 2.5V, I_D = 500mA
„ Max r_DS(on) = 1.25Ω at V_GS = 1.8V, I_D =150 mA
Q2: P-Channel
„ Max r_DS(on) = 1.2Ω at V_GS = -4.5V, I_D = -350mA
„ Max r_DS(on) = 1.6Ω at V_GS = -2.5V, I_D = -300mA
„ Max r_DS(on) = 2.7Ω at V_GS = -1.8V, I_D = -150mA
„ ESD protection diode (note 3)
„ RoHS Compliant
General Description
This Complementary N & P-Channel MOSFET has been
designed using Fairchild Semiconductor’s advanced Power
Trench^® process to optimize the r_DS(ON) @ V_GS= 2.5V and
specify the r_DS(ON) @ V_GS = 1.8V.
Applications
„ Level shifting
„ Power Supply Converter Circuits
„ Load/Power Switching Cell Phones, Pagers
6
5
4
S2 4
G2 5
3 D2
2 G1
1
2
3
D1 6
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation (Steady State)
T_J, T_STG Operating and Storage Jaunting Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
Device Marking
E
Device
FDY4000CZ
Package
SC89-6
Reel Size
7”
1 S1
Q1
Q2
20
-20
±12
±8
600
-350
1000
-1000
625
446
-55 to 150
Units
V
V
mA
mW
°C
200
°C/W
280
Tape Width
8mm
Quantity
3000units
©2006 Fairchild Semiconductor Corporation
1
FDY4000CZ Rev. B
www.fairchildsemi.com