FDY302NZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET

July 2006
FDY302NZ
Single N-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5V.
Applications
• Li-Ion Battery Pack
Features
• 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V
RDS(ON) = 500 mΩ @ VGS = 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
1S
G1
G
S2
D
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
Ratings
VDS
VGS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature
Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
E
FDY302NZ
7 ’’
20
± 12
600
1000
625
446
–55 to +150
200
280
Tape width
8 mm
3D
Unit
s
V
V
mA
mW
°C
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDY302NZ Rev A
www.fairchildsemi.com