FDY102PZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5

FDY102PZ
Single P-Channel (–1.5 V) Specified PowerTrench^® MOSFET
–20 V, –0.83 A, 0.5 :
Features
General Description
February 2010
tm
„ Max r_DS(on) = 0.5 : at V_GS = –4.5 V, I_D = –0.83 A
„ Max r_DS(on) = 0.7 : at V_GS = –2.5 V, I_D = –0.70 A
„ Max r_DS(on) = 1.2 : at V_GS = –1.8 V, I_D = –0.43 A
„ Max r_DS(on) = 1.8 : at V_GS = –1.5 V, I_D = –0.36 A
„ HBM ESD protection level = 1400 V (Note 3)
„ RoHS Compliant
This Single P-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r_DS(on)@V_GS = –1.5 V.
Application
„ Li-Ion Battery Pack
S
G
D
SC89-3
G1
S2
3D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–0.83
–1.0
0.625
0.446
–55 to +150
Units
V
V
A
W
°C
R_TJA
R_TJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
200
(Note 1b)
280
°C/W
Device Marking
E
Device
FDY102PZ
Package
SC89-3
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDY102PZ Rev.B2
www.fairchildsemi.com