FDY101PZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single P-Channel (-2.5V) Specified PowerTrench MOSFET

January 2006
FDY101PZ
Single P-Channel (– 2.5V) Specified PowerTrench^® MOSFET
General Description
This Single P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R_DS(ON) @ V_GS = – 2.5v.
Applications
• Li-Ion Battery Pack
Features
• – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V
RDS(ON) = 12 Ω @ VGS = – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
1S
G1
G
D
S2
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
VDSS
V_GSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature
Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
B
FDY101PZ
7’’
Ratings
– 20
±8
– 150
– 1000
625
446
–55 to +150
200
280
Tape width
8 mm
3D
Units
V
V
mA
mW
°C
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDY101PZ Rev A
www.fairchildsemi.com