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FDY1002PZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual P-Channel (-1.5 V) Specified PowerTrench MOSFET | |||
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FDY1002PZ
Dual P-Channel (â1.5 V) Specified PowerTrench® MOSFET
September 2008
â20 V, â0.83 A, 0.5 â¦
Features
General Description
 Max rDS(on) = 0.5 ⦠at VGS = â4.5 V, ID = â0.83 A
 Max rDS(on) = 0.7 ⦠at VGS = â2.5 V, ID = â0.70 A
 Max rDS(on) = 1.2 ⦠at VGS = â1.8 V, ID = â0.43 A
 Max rDS(on) = 1.8 ⦠at VGS = â1.5 V, ID = â0.36 A
 HBM ESD protection level = 1400 V (Note 3)
 RoHS Compliant
This Dual P-Channel MOSFET has been designed using
Fairchild Semiconductorâs advanced Power Trench process to
optimize the rDS(on)@VGS = â1.5 V.
Application
 Li-Ion Battery Pack
6
5
4
1
2
3
SC89-6
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
â20
±8
â0.83
â1.0
0.625
0.446
â55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
200
(Note 1b)
280
°C/W
Device Marking
G
Device
FDY1002PZ
Package
SC89-6
Reel Size
7â
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDY1002PZ Rev.B
www.fairchildsemi.com
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