|
FDW6923_08 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench팜 MOSFET with Schottky Diode | |||
|
July 2008
FDW6923
P-Channel 2.5V Specified PowerTrenchï MOSFET with Schottky Diode
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductorâs advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Applications
⢠DC/DC conversion
Features
⢠â3.5 A, â20 V. RDS(ON) = 0.045 ⦠@ VGS = â4.5 V
RDS(ON) = 0.075 ⦠@ VGS = â2.5 V
⢠VF < 0.55 V @ 1 A
⢠High performance trench technology for extremely
low RDS(ON)
⢠Low profile TSSOP-8 package
A
A
A
C
TSSOP-8
G
S
S
D
Pin 1
5
4
6
3
7
2
8
1
MOSFET Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
(Note 1)
â Pulsed
MOSFET Power Dissipation (minimum pad) (Note 1)
Schottky Power Dissipation (minimum pad) (Note 1)
Operating and Storage Junction Temperature Range
Ratings
â20
± 12
â3.5
â30
1.2
1.0
-55 to +150
Schottky Maximum Ratings
VRRM
Repetitive Peak Reverse Voltage
20
IF
Average Forward Current
1.5
IFM
Peak Forward Current
30
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
MOSFET: 115
Schottky: 130
Package Marking and Ordering Information
Device Marking
Device
Reel Size
6923
FDW6923
13ââ
Tape width
16mm
Units
V
V
A
W
°C
V
A
A
°C/W
Quantity
2500 units
ï2008 Fairchild Semiconductor International
FDW6923 Rev. D1(W)
|
▷ |