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| FDW2601NZ Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET | |||
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December 2004
FDW2601NZ
Dual N-Channel 2.5V Specified PowerTrench®
MOSFET
Features
! 8.2A, 30V rDS(ON) = 0.015â¦, VGS = 4.5V
rDS(ON) = 0.020â¦, VGS = 2.5V
! Extended VGS range (±12 V) for battery applications
! HBM ESD Protection Level of 3.5kV Typical (note 3)
! High performance trench technology for extremely low
rDS(ON)
! Low profile TSSOP-8 package
Applications
! Load switch
! Battery charge
! Battery disconnect circuits
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
G2
S2
S2
D2
Pin 1
TSSOP-8
G1
S1
S1
D1
D1
D2
G1
G2
S1
S2
©2004 Fairchild Semiconductor Corporation
1
FDW2601NZ Rev. A
www.fairchildsemi.com
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