FDW2521C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Complementary PowerTrench MOSFET

May 2002
FDW2521C
Complementary PowerTrench^ MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC conversion
• Power management
• Load switch
Features
• Q1: N-Channel
5.5 A, 20 V. RDS(ON) = 21 mΩ @ VGS = 4.5 V
RDS(ON) = 35 mΩ @ VGS = 2.5 V
• Q2: P-Channel
–3.8 A, 20 V. RDS(ON) = 43 mΩ @ VGS = –4.5 V
RDS(ON) = 70 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2521C
FDW2521C
13’’
Q1
1
2
3
4
Q2
8
7
6
5
Q1
Q2
20
–20
±12
±12
5.5
–3.8
30
–30
1.0
0.6
-55 to +150
Units
V
V
A
W
°C
125
°C/W
208
Tape width
12mm
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDW2521C Rev D(W)