FDW2515NZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Common Drain N-Channel 2.5V specified PowerTrench MOSFET

February 2003
FDW2515NZ
Common Drain N-Channel 2.5V specified PowerTrench^ MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Li-Ion Battery Pack
Features
• 5.8 A, 20 V
RDS(ON) = 28 mΩ @ VGS = 4.5 V
RDS(ON) = 38 mΩ @ VGS = 2.5 V
• Extended VGSS range (±12V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON) @ VGS = 2.5 V
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2515NZ
FDW2515NZ
13’’
Ratings
20
±12
5.8
20
1.6
1.1
–55 to +150
77
114
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2003 Fairchild Semiconductor Corporation
FDW2515NZ Rev C