FDW2511NZ_08 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench® MOSFET

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May 2008
FDW2511NZ
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Dual N-Channel 2.5V Specified PowerTrench®
MOSFET
Features
! 7.1A, 20V r_DS(ON) =0.020Ω, V_GS = 4.5V
r_DS(ON) =0.025Ω, V_GS = 2.5V
! Extended V_GS range (±12 V) for battery applications
! HBM ESD Protection Level of 3.5kV Typical (note 3)
! High performance trench technology for extremely low
r_DS(ON)
! Low profile TSSOP-8 package
Applications
! Load switch
! Battery charge
! Battery disconnect circuits
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
G2
S2
S2
D2
TSSOP-8 ^{Pin 1}
G1
S1
S1
D1
D1
D2
G1
G2
S1
S2
©2008 Fairchild Semiconductor Corporation
FDW2511NZ Rev. A1
1
www.fairchildsemi.com