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FDW2510NZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET | |||
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April 2004
FDW2510NZ
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchildâs Semiconductorâs advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V â 12V).
Applications
⢠Li-Ion Battery Pack
Features
⢠6.4 A, 20 V
RDS(ON) = 24 m⦠@ VGS = 4.5 V
RDS(ON) = 32 m⦠@ VGS = 2.5 V
⢠Extended VGSS range (±12V) for battery applications
⢠ESD protection diode (note 3)
⢠High performance trench technology for extremely
low RDS(ON)
⢠Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2510NZ
FDW2510NZ
13ââ
Ratings
20
±12
6.4
30
1.6
1.1
â55 to +150
77
114
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDW2510NZ Rev C(W)
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