FDW2509NZ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

January 2005
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is a rugged
• 7.1 A, 20 V. RDS(ON) = 20 mΩ @ VGS = 4.5 V
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
RDS(ON) = 26 mΩ @ VGS = 2.5 V
management applications with a wide range of gate drive
voltage (2.5V – 12V).
•
Extended VGSS range (±12V) for battery applications
• ESD protection diode (note 3)
Applications
Li-Ion Battery Pack
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Ratings
20
±12
7.1
30
1.6
1.1
–55 to +150
77
114
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2509NZ
FDW2509NZ
13’’
©2005 Fairchild Semiconductor Corporation
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
3000 units
FDW2509NZ Rev C(W)