FDW2508PB Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – FDW2508PB Dual P-Channel -1.8V Specified PowerTrench MOSFET -12V, -6A, 18mohm

October 2006
FDW2508PB
Dual P-Channel –1.8V Specified PowerTrench^® MOSFET
–12V, –6A, 18mΩ
Features
General Description
„ Max r_DS(on) = 18mΩ at V_GS = –4.5V, I_D = –6A
„ Max r_DS(on) = 22mΩ at V_GS = –2.5V, I_D = –5A
„ Max r_DS(on) = 30mΩ at V_GS = –1.8V, I_D = –4A
„ Low gate charge
„ High performance trench technology for extremely low r_DS(on)
„ Low profile TSSOP-8 package
„ RoHS compliant
This P-Channel –1.8V specified MOSFET uses Fairchild
Semiconductor’s advanced low voltage PowerTrench^®. It has
been optimized for battery power management applications.
Application
„ Power management
„ Load switch
„ Battery protection
TSSOP8
Pin 1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation-Dual Operation
Power Dissipation-Single Operation
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–12
±8
–6
–30
2
1.6
1
–55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
80
°C/W
(Note 1b)
125
Device Marking
2508PB
Device
FDW2508PB
Package
TSSOP-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDW2508PB Rev.B
www.fairchildsemi.com