FDW2508P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual P-Channel 1.8 V Specified PowerTrench MOSFET

December 2001
FDW2508P
Dual P-Channel 1.8 V Specified PowerTrench^ MOSFET
General Description
This P-Channel –1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Power management
• Load switch
• Battery protection
Features
• –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V
RDS(ON) = 22 mΩ @ VGS = –2.5 V
RDS(ON) = 30 mΩ @ VGS = –1.8 V
• Low gate charge(26nC typical)
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
Power Dissipation for Single Operation
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2508P
FDW2508P
13’’
1
2
3
4
Ratings
–12
±8
–6
–30
1.3
1
–55 to +150
100
125
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDW2508P Rev. E (W)