FDW2507NZ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Common Drain N-Channel 2.5V specified PowerTrench MOSFET

March 2003
FDW2507NZ
Common Drain N-Channel 2.5V specified PowerTrench^ MOSFET
General Description
This monolithic common drain N-Channel MOSFET has
been designed using Fairchild Semiconductor’s
advanced PowerTrench process to optimize the RDS(ON)
@ VGS = 2.5v on special TSSOP-8 lead frame with all
the drains on one side of the package.
Applications
• Li-Ion Battery Pack
Features
• 7.5 A, 20 V
RDS(ON) = 19 mΩ @ VGS = 4.5 V
RDS(ON) = 23 mΩ @ VGS = 2.5 V
• Isolated source and drain pins
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON) @ VGS = 2.5 V
• Low profile TSSOP-8 package
D
D
D
1
8
D
G2
2
7
S2
G1
S1
3
6
TSSOP-8
Pin 1
4
5
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2507NZ
FDW2507NZ
13’’
Ratings
20
±12
7.5
30
1.6
1.1
–55 to +150
77
114
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2003 Fairchild Semiconductor Corporation
FDW2507NZ Rev C2