FDW2506P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

October 2000
FDW2506P
Dual P-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –5.3 A, –20 V, RDS(ON) = 0.022 Ω @ VGS = –4.5 V.
RDS(ON) = 0.033 Ω @ VGS = –2.5V.
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
1
8
2
7
3
6
4
5
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Ratings
–20
±12
–5.3
–30
1.0
0.6
-55 to +150
125
208
Units
V
V
A
W
°C
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2506P
FDW2506P
13’’
Tape width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDW2506P Rev. C (W)