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FDW2504P_08 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET | |||
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July 2008
FDW2504P
Dual P-Channel 2.5V Specified PowerTrenchï MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductorâs advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V â 12V).
Applications
⢠Load switch
⢠Motor drive
⢠DC/DC conversion
⢠Power management
Features
⢠â3.8 A, â20 V, RDS(ON) = 0.043 ⦠@ VGS = â4.5 V
RDS(ON) = 0.070 ⦠@ VGS = â2.5 V
⢠Extended VGSS range (±12V) for battery applications
⢠Low gate charge
⢠High performance trench technology for extremely
low RDS(ON)
⢠Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
1
8
2
7
3
6
4
5
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1)
PD
Power Dissipation
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Ratings
â20
±12
â3.8
â30
1.0
0.6
â55 to +150
125
208
Units
V
V
A
W
°C
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2504P
FDW2504P
13ââ
Tape width
12mm
Quantity
2500 units
ï2008 Fairchild Semiconductor Corporation
FDW2504P Rev. E1 (W)
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