FDU8880_08 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

May 2008
FDU8880
N-Channel PowerTrench^® MOSFET
30V, 58A, 10mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
Applications
• DC/DC converters
tm
Features
• r_DS(ON) = 10mΩ, V_GS = 10V, I_D = 35A
• r_DS(ON) = 13mΩ, V_GS = 4.5V, I_D = 35A
• High performance trench technology for extremely low
r_DS(ON)
• Low gate charge
• High power and current handling capability
D
GDS
I-PAK
(TO-251AA)
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V) (Note 1)
Continuous (T_C = 25^oC, V_GS = 4.5V) (Note 1)
Continuous (T_amb = 25^oC, V_GS = 10V, with R_θJA = 52^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Ratings
30
±20
58
51
13
Figure 4
53
55
0.37
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
R_θJC
Thermal Resistance Junction to Case TO-251
2.73
R_θJA
Thermal Resistance Junction to Ambient TO-251
100
R_θJA
Thermal Resistance Junction to Ambient TO-251, 1in² copper pad area
52
o_C/W
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
FDU8880
Device
FDU8880
Package
TO-251AA
Reel Size
Tube
Tape Width
N/A
Quantity
75 units
©2008 Fairchild Semiconductor Corporation
FDU8880 Rev. B3