FDU8770 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

March 2006
FDD8770/FDU8770
N-Channel PowerTrench^® MOSFET
25V, 35A, 4.0mΩ
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General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(on) and fast switching speed.
Application
Features
„ Max r_DS(on) = 4.0mΩ at V_GS = 10V, I_D = 35A
„ Max r_DS(on) = 5.5mΩ at V_GS = 4.5V, I_D = 35A
„ Low gate charge: Q_g(10) = 52nC(Typ), V_GS = 10V
„ Low gate resistance
„ RoHS Compliant
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
D
G DS
I-PAK
S
G
(TO-251AA)
Short Lead I-PAK
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
I_D
-Continuous (Die Limited)
-Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
R_θJC
Thermal Resistance, Junction to Case TO-252,TO-251
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in² copper pad area
Package Marking and Ordering Information
Device Marking
FDD8770
FDU8770
FDU8770
Device
FDD8770
FDU8770
FDU8770_F071
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
N/A(Tube)
N/A(Tube)
Ratings
25
±20
35
210
407
113
115
-55 to 175
1.3
100
52
Tape Width
12mm
N/A
N/A
S
Units
V
V
A
mJ
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75 units
75 units
©2006 Fairchild Semiconductor Corporation
1
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com