FDU6680A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

June 2003
FDD6680A/FDU6680A
30V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 56 A, 30 V
RDS(ON) = 9.5 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
56
14
100
60
2.8
1.3
–55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.5
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
45
RθJA
(Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6680A
FDD6680A
D-PAK (TO-252)
FDU6680A
FDU6680A
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
75
©2003 Fairchild Semiconductor Corp.
FDD6680A/FDU6680A Rev DW)