FDU6676AS_08 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench SyncFET

FDU6676AS
N-Channel PowerTrench^® SyncFET^™
30V, 90A, 5.8mΩ
General Description
The FDU6676AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC/DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDU6676AS includes
a patented combination of a MOSFET monolithically
integrated with a Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
April 2008
tm
Features
• R_DS(ON) = 5.8mΩ Max, VGS = 10V
• R_DS(ON) = 7.3mΩ Max, VGS = 4.5V
• High performance trench technology for extremely
low R_DS(ON)
• Low Gate Charge
• High power and current handling capability
• Includes SyncFET Schottky diode
D
GDS
I-PAK
(TO-251AA)
G
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
–Continuous
(Note 1a)
–Pulsed
P_D
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
T_J, T_STG
(Note 1b)
Operating and Storage Junction Temperature
Range
Ratings
30
±20
90
100
70
3.1
1.3
–55 to +150
Thermal Characteristics
R_θJC
Thermal Resistance junction to Case
(Note 1)
1.8
R_θJA
Thermal Resistance junction to Ambient
(Note 1a)
45
R_θJA
Thermal Resistance junction to Ambient
(Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDU6676AS
FDU6676AS
FDU6676AS
I-PAK (TO-251)
FDU6676AS_F071 (Note 4) I-PAK (TO-251)����
Tube
Tube
Tape width
N/A
N/A
Units
V
V
A
W
°C
°C/W
Quantity
75
75
©2008 Fairchild Semiconductor Corporation
FDU6676AS Rev. A1 (W)