FDU3580 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET

August 2001
FDD3580/FDU3580
80V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable RDS(ON)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 7.7 A, 80 V.
RDS(ON) = 29 mΩ @ VGS = 10 V
RDS(ON) = 33 mΩ @ VGS = 6 V
• Low gate charge (34nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
G
S
D_T(O-TP(_-TOD2AO₅^--KP_2-2A5K2)
I-PAK
G
GDS
(TO-251AA)
Absolute Maximum Ratings
TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current-Continuous (Note 1a)
Maximum Drain Current – Pulsed
Maximum Power Dissipation @TC = 25^oC
TA = 25^oC
TA = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to- Case
RθJA
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD3580
FDD3580
13’’
FDU3580
FDU3580
Tube
Ratings
80
± 20
7.7
50
42
3.8
1.6
−55 to +175
3.5
96
Tape width
16mm
N/A
S
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
75
2001 Fairchild Semiconductor Corporation
FDD3580/FDU3580 Rev A1(W)