FDT86256 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ

FDT86256
N-Channel PowerTrench^® MOSFET
150 V, 1.2 A, 845 mΩ
Features
„ Max r_DS(on) = 845 mΩ at V_GS = 10 V, I_D = 1.2 A
„ Max r_DS(on) = 1280 mΩ at V_GS = 6.0 V, I_D = 1.0 A
„ Very low Qg and Qgd compared to competing trench
technologies
August 2011
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ DC-DC conversion
„ Inverter
„ Synchronous Rectifier
D
SOT-223
S
D
G
D
G
D
S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
3
2.5
1.2
2
1
10
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
12
(Note 1a)
55
°C/W
Device Marking
86256
Device
FDT86256
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDT86256 Rev. C
www.fairchildsemi.com