FDT86246 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ

December 2010
FDT86246
N-Channel Power Trench^® MOSFET
150 V, 2 A, 236 mΩ
Features
General Description
„ Max r_DS(on) = 236 mΩ at V_GS = 10 V, I_D = 2 A
„ Max r_DS(on) = 329 mΩ at V_GS = 6 V, I_D = 1.7 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
Applications
„ Load Switch
„ Primary Switch
D
SOT-223
S
D
G
D
G
D
S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
2
8
8
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
12
(Note 1a)
55
°C/W
Device Marking
86246
Device
FDT86246
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDT86246 Rev.C
www.fairchildsemi.com