FDT86106LZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 m Ohm

January 2013
FDT86106LZ
N-Channel PowerTrench^® MOSFET
100 V, 3.2 A, 108 mΩ
Features
General Description
„ Max r_DS(on) = 108 mΩ at V_GS = 10 V, I_D = 3.2 A
„ Max r_DS(on) = 153 mΩ at V_GS = 4.5 V, I_D = 2.7 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ HBM ESD protection level > 3 KV typical (Note 4)
„ 100% UIL tested
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench^® process
that has been special tailored to minimize the on-state resistance
and yet maintain superior switching performance. G-S zener
has been added to enhance ESD voltage level.
Application
„ DC - DC Conversion
„ RoHS Compliant
D
SOT-223
S
D
G
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
3.2
12
12
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
12
(Note 1a)
55
°C/W
Device Marking
86106LZ
Device
FDT86106LZ
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2013 Fairchild Semiconductor Corporation
1
FDT86106LZ Rev.C2
www.fairchildsemi.com