FDT86102LZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ

November 2010
FDT86102LZ
N-Channel PowerTrench^® MOSFET
100 V, 6.6 A, 28 mΩ
Features
„ Max r_DS(on) = 28 mΩ at V_GS = 10 V, I_D = 6.6 A
„ Max r_DS(on) = 38 mΩ at V_GS = 4.5 V, I_D = 5.5 A
„ HBM ESD protection level > 6 kV typical (Note 4)
„ Very low Qg and Qgd compared to competing trench
technologies
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
„ DC-DC conversion
„ Inverter
„ Synchronous Rectifier
D
SOT-223
S
D
G
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
6.6
40
84
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
12
(Note 1a)
55
°C/W
Device Marking
86102LZ
Device
FDT86102LZ
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDT86102LZ Rev. C
www.fairchildsemi.com